dpg 30 c 200 hb advanced ns hiperfred symbol definition r a t i n g s features / advantages: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch typ. max. i fsm i r a v 150 i fav a v f 1.25 r thjc 1.70 k/w v r = 1 2 3 min. 15 t = 10 ms applications: antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) v rrm v 200 1 t vj vc = t vj c =ma 0.08 package: part number v r = t vj =c i f =a v t c = 140c rectangular, d = 0.5 p tot 90 w t c c = t vj 175 c -55 v i rrm fav = = 200 15 15 t vj =45c dpg 30 c 200 hb v a 200 v 200 25 25 25 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current conditions unit 1.50 t vj c =25 c j tbd pf j unction capacitance v= v; 100 t 150 v f0 v 0.69 t vj = 175c r f 17.3 f = 1 mhz = c 25 m v 1.00 t vj =c i f =a v 15 150 1.27 i f =a 30 i f =a 30 2x threshold voltage slope resistance for power loss calculation only backside: cathode 3a t vj =c reverse recovery time a tbd 35 tbd ns (50 hz), sine t rr = 35 ns housing: high performance fast recovery diode low loss and soft recovery common cathode to-247 r industry standard outline r epoxy meets ul 94v-0 r rohs compliant r vj i rm max. reverse recovery current i f =a; 20 25 t= c vj -di f =a/s 200 /dt t rr v r = v 100 t vj =c 25 t= c vj a ixys reserves the right to change limits, conditions and dimensions. ? 2007 ixys all rights reserved 0629 data according to iec 60747and per diode unless otherwise specified
dpg 30 c 200 hb advanced i rms a per pin 50 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 6 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit i is typically limited by: 1. pin-to-chip re sistance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a non-isol ated backside, the whole current capability can be used by con necting the backside. f c n 120 mounting force with clip 20 ordering delivering mode base qty code key standard part name dpg 30 c 200 hb 505797 tube 30 xxxxxx yyww logo marking on product datecode assembly code abcdef product marking d p g 30 c 200 hb part number diode hiperfred extreme fast common cathode to-247ad (3) = = = dpg30c200pb dpg30c300hb dpg30c300pb dpg30c300pc to-220 to-247 to-220 to-263 (d2pak) similar part package 1) 1 ) marking on product DPG30C200HB 200 300 300 300 voltage class current rating [a] reverse voltage [v] = = = = rms ixys reserves the right to change limits, conditions and dimensions. ? 2007 ixys all rights reserved 0629 data according to iec 60747and per diode unless otherwise specified
dpg 30 c 200 hb advanced symbol inches millimeters min max min max a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.215 bsc 5.46 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ?p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ?p1 - 0.291 - 7.39 outlines to-247 ixys reserves the right to change limits, conditions and dimensions. ? 2007 ixys all rights reserved 0629 data according to iec 60747and per diode unless otherwise specified
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